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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12557465 B1

PDFFull Text
Date of Patent:
Feb. 17, 2026

Filed:

Oct. 22, 2021

Photoelectric device

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Zhenqi Zhang, Beijing, CN;

Assignee:

BOE Technology Group Co., Ltd., Beijing, CN;

Attorney:

IPro, PLLC

Primary Examiner:

Monica D Harrison

Assistant Examiner:

Christopher A Culbert

Int. Cl.
CPC ...
H10K 30/81 (2023.01); B82Y 30/00 (2011.01); H10K 30/50 (2023.01); H10K 50/115 (2023.01); H10K 50/17 (2023.01); H10K 50/81 (2023.01); H10K 85/10 (2023.01); H10K 85/40 (2023.01); H10K 85/60 (2023.01); H10K 102/10 (2023.01);
U.S. Cl.
CPC ...
H10K 30/81 (2023.02); B82Y 30/00 (2013.01); H10K 30/50 (2023.02); H10K 50/115 (2023.02); H10K 50/81 (2023.02); H10K 85/1135 (2023.02); H10K 85/40 (2023.02); H10K 85/654 (2023.02); H10K 50/17 (2023.02); H10K 2102/102 (2023.02); H10K 2102/103 (2023.02);
Abstract

Provided in the present disclosure is a photoelectric device. For the photoelectric device, a modification layer is added on the surface of a first electrode layer on the side away from a base substrate. The presence of the modification layer can prevent the direct contact of the first electrode layer and other film layers, thereby alleviating the problem of corrosion of indium-containing oxide which constitutes the first electrode layer. Furthermore, an indium-ion trapping group contained in the modification layer can fix indium ions released after the corrosion of the indium-containing oxide to the surface of the first electrode layer, thereby preventing the indium ions from moving to the inner part of the photoelectric device, which can then increase the service life of the photoelectric device.

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