The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Oct. 02, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Chilkeun Park, Seoul, KR;

Junghoon Kim, Seoul, KR;

Chunghyun Lim, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/821 (2025.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01);
U.S. Cl.
CPC ...
H10H 20/821 (2025.01); H01L 25/167 (2013.01); H10H 20/018 (2025.01); H10H 20/84 (2025.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/95 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/29006 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83888 (2013.01); H01L 2224/95101 (2013.01); H01L 2224/95133 (2013.01); H01L 2924/12041 (2013.01); H10H 20/034 (2025.01);
Abstract

The present specification provides a display device using semiconductor light-emitting diodes which are self-assembled in fluid, and a method for manufacturing same. Specifically, the semiconductor light-emitting diode comprises: a first-conductive-type electrode layer and a second-conductive-type electrode layer; a first-conductive-type semiconductor layer electrically connected to the first-conductive-type electrode layer; an active layer provided on the first-conductive-type semiconductor layer; and a second-conductive-type semiconductor layer provided on the active layer and electrically connected to the second-conductive-type electrode layer, wherein one surface of the second-conductive-type semiconductor layer comprises a mesa structure formed by etching a portion of the one surface, and the second-conductive-type electrode layer is provided on the one surface comprising the mesa structure of the second-conductive-type semiconductor layer.


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