The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Feb. 03, 2022
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Hiroki Tojinbara, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A solid-state imaging device as disclosed includes a semiconductor layer having a light incidence surface and an element formation surface. The semiconductor layer includes a plurality of photoelectric conversion units including a first photoelectric conversion portion, a second photoelectric conversion portion, an isolation portion, a charge accumulation region, a first transfer transistor capable of transferring a signal charge from the first photoelectric conversion portion to the charge accumulation region, and a second transfer transistor capable of transferring a signal charge from the second photoelectric conversion portion to the charge accumulation region. The isolation portion includes a first region formed by an insulating material extending in a thickness direction of the semiconductor layer from the element formation surface side, and a second region provided on the light incidence surface side of the first region and formed by a semiconductor region into which impurities exhibiting a first conductivity type are implanted.