The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Jun. 07, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Haeyong Park, Yongin-si, KR;

Sungsoo Choi, Seongnam-si, KR;

Jongeun Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/18 (2025.01);
Abstract

An image sensor includes a substrate having first and second surfaces opposite each other, including first and second pixels adjacent to each other, a device isolation portion isolating the first and second pixels from each other in the substrate, a transfer gate on the first surface of the first and second pixels, a ground region in one of the first and second pixels, and a first color filter and a micro lens array layer stacked on the second surface. The deep device isolation portion includes first and second isolation portions vertically overlapping and spaced apart. The first isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a high-concentration doped pattern on the first conductive pattern, and an insulating pattern between the first conductive pattern and the high-concentration doped pattern. The ground region and high-concentration doped pattern include dopants having the same conductivity type.


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