The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Mar. 19, 2021
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Yoshihiro Komatsu, Kanagawa, JP;
Shota Mizukami, Hokkai, JP;
Shinobu Kawaguchi, Kanagawa, JP;
Hiromi Sawai, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Yuji Egi, Kanagawa, JP;
Yujiro Sakurada, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Abstract
A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.