The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jan. 24, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Namkyu Cho, Suwon-si, KR;
Jungtaek Kim, Suwon-si, KR;
Moon Seung Yang, Suwon-si, KR;
Sumin Yu, Suwon-si, KR;
Seojin Jeong, Suwon-si, KR;
Seokhoon Kim, Suwon-si, KR;
Pankwi Park, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, and a source/drain pattern on a side surface of the channel pattern, the source/drain pattern including a first section between a first level and a second level that is higher than the first level, a first variation section between the second level and a third level that is higher than the second level, and a second section between the third level and a fourth level that is higher than the third level, where a rate of change in germanium concentration in the first variation section in a first direction is greater than a rate of change in germanium concentration in each of the first section and the second section in the first direction, and a germanium concentration at each of the first level and the second level is greater than 0 at % and equal to or less than 10 at %.