The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jan. 24, 2022
Tamura Corporation, Tokyo, JP;
Masaru Takizawa, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
Abstract
A Schottky barrier diode, including a first n-type semiconductor layer including a β-GaO-based single crystal epitaxial layer and having a first carrier concentration that determines reverse breakdown voltage and forward voltage, a second n-type semiconductor layer including a β-GaO-based single crystal substrate and having a second carrier concentration that is higher than the first carrier concentration and determines forward voltage, a Schottky electrode provided on a surface of the first n-type semiconductor layer on the opposite side to the second n-type semiconductor layer, and an ohmic electrode provided on a surface of the second n-type semiconductor layer on the opposite side to the first n-type semiconductor layer. The β-GaO-based single crystal substrate includes a surface that has a plane orientation rotated by an angle of not more than 37.5° from a (010) plane.