The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Oct. 11, 2022
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

James Mcclay, Dudley, MA (US);

Maxim Klebanov, Palm Coast, FL (US);

Sundar Chetlur, Frisco, TX (US);

Thomas S. Chung, Kissimmee, FL (US);

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10B 41/35 (2023.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
H10D 62/114 (2025.01); H10B 41/35 (2023.02); H10D 30/683 (2025.01);
Abstract

Methods and apparatus for a device that includes a circuit, such as a memory cell, and an isolation structure to electrically isolate the circuit cell. The isolation structure can include a p-type substrate, a first series of p-type material extending to the p-type substrate, and a second series of p-type material extending to the p-type substrate. The first series of p-type material, the p-type substrate, and the second series of p-type material surrounds a first side, a second side, and a bottom of the circuit cell to electrically isolate the circuit cell with continuous p-type material. In some embodiments, the first series of p-type material comprises p-type well regions. In some embodiments, the first series of p-type material comprises deep trench isolation.


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