The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Sep. 06, 2023
Denso Corporation, Kariya, JP;
Yuichiro Matsuura, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A field-effect transistor includes: a semiconductor substrate having trenches; and a gate electrode disposed in the trenches. Breakdown voltage regions are provided in each inter-trench range. The breakdown voltage regions are arranged to form rows extending in a first direction intersecting the trenches. The rows are arranged at interval in a second direction parallel to the trenches. Each of the breakdown voltage regions extends from an upper side of a lower end of each of the trenches to a lower side of the lower end of each of the trenches, and is disposed at a distance from a gate insulating film. A drift region is in contact with the gate insulating film at a position between the breakdown voltage region and the gate insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile