The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Feb. 08, 2022
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
John Andrew Logan, Lawrence, MA (US);
Brian Douglas Schultz, Lexington, MA (US);
Maher Bishara Tahhan, Tewksbury, MA (US);
Assignee:
RAYTHEON COMPANY, Arlington, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/472 (2025.01); H10D 62/8503 (2025.01);
Abstract
A high electron mobility transistor (HEMT) heterostructure includes a substrate; a N-polar channel layer; and a N-polar barrier layer positioned between the substrate and the channel layer, wherein the barrier layer comprises a rare-earth III-nitride material. The rare earth III-nitride material can be ScAlN.