The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Aug. 08, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Kojiro Shimizu, Mie Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02);
Abstract

A semiconductor memory device includes first conductive layers stacked in a first direction. A bit line is above the first conductive layers in the first direction. A second conductive layer and a first insulating layer are between the first conductive layers and the bit line. A first pillar extends through the first conductive layers and the second conductive layer. A first via contact connected to an end of the first pillar is on a bit line side. The distance between an upper end of the first insulating layer and an upper surface of the second conductive layer is greater than or equal to the distance between an upper end of the first via contact and the upper surface of the second conductive layer.


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Shimizu, Kojiro. (2026). Semiconductor memory device (U.S. Patent No. 12557281). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557281

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