The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Jun. 12, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyooho Jung, Seoul, KR;

Jongyeong Min, Suwon-si, KR;

Jiye Baek, Suwon-si, KR;

Yeseul Lee, Suwon-si, KR;

Jinwook Lee, Seoul, KR;

Wonsik Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/0335 (2023.02); H10B 12/34 (2023.02);
Abstract

An integrated circuit device may include a plurality of lower electrodes above a substrate, a supporter between the plurality of lower electrodes, an upper electrode on the plurality of lower electrodes, and a capacitor dielectric film between the upper electrode and the plurality of lower electrodes. The supporter may include one of a metal oxide, a metal nitride, and a metal oxynitride. A portion of the capacitor dielectric film may include a dopant. The dopant in the portion of the capacitor dielectric film and a metal in the supporter may be a same metal.


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