The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Oct. 13, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Intak Jeon, Seoul, KR;
Han Jin Lim, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); B05D 3/00 (2006.01); B05D 3/06 (2006.01); B05D 5/12 (2006.01); C23C 14/02 (2006.01); C23C 14/04 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/48 (2006.01); C23C 18/04 (2006.01);
U.S. Cl.
CPC ...
H10B 12/03 (2023.02); B05D 3/062 (2013.01); B05D 3/207 (2013.01); B05D 5/12 (2013.01); B05D 2350/00 (2013.01); C23C 14/022 (2013.01); C23C 14/048 (2013.01); C23C 16/0209 (2013.01); C23C 16/047 (2013.01); C23C 16/481 (2013.01); C23C 18/04 (2013.01);
Abstract
A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.