The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Mar. 05, 2018
Applicant:
Sitime Corporation, Santa Clara, CA (US);
Inventors:
Michael Julian Daneman, Campbell, CA (US);
Charles I. Grosjean, Los Gatos, CA (US);
Aaron Partridge, Cupertino, CA (US);
Paul M. Hagelin, Saratoga, CA (US);
Assignee:
SiTime Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); B81B 7/00 (2006.01); B81B 7/02 (2006.01); B81C 1/00 (2006.01); H03H 9/13 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02244 (2013.01); B81B 7/0006 (2013.01); B81B 7/02 (2013.01); B81C 1/0069 (2013.01); H03H 9/131 (2013.01); H03H 9/15 (2013.01); H03H 2009/155 (2013.01);
Abstract
A semiconductor device includes a first silicon layer with first and second regions of substantially different dopant concentration and a resonant MEMS member formed in the first region. A piezoelectric layer is disposed over the resonant MEMS member and conductive material is disposed over the piezoelectric layer and patterned to form first and second electrodes.