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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12553159 B1

PDFFull Text
Date of Patent:
Feb. 17, 2026

Filed:

Jul. 27, 2022

Moisture-response deforming fabric

Applicant:

Taiwan Textile Research Institute, New Taipei, TW;

Inventors:

Wei-Hsiang Lin, New Taipei, TW;

PO-Hsun Huang, New Taipei, TW;

Jen-Chi Chao, New Taipei, TW;

Ta-Chung An, New Taipei, TW;

Shu-Hui Lin, New Taipei, TW;

Assignee:

TAIWAN TEXTILE RESEARCH INSTITUTE, New Taipei, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Camie S Thompson

Int. Cl.
CPC ...
D03D 15/50 (2021.01); D03D 15/283 (2021.01); D04B 1/10 (2006.01); D04B 21/08 (2006.01);
U.S. Cl.
CPC ...
D03D 15/50 (2021.01); D03D 15/283 (2021.01); D04B 1/10 (2013.01); D04B 21/08 (2013.01); D10B 2331/02 (2013.01); D10B 2401/02 (2013.01); D10B 2501/00 (2013.01);
Abstract

A moisture-response deforming fabric includes 40 parts by weight to 70 parts by weight of an ordinary yarn and 30 parts by weight to 60 parts by weight of a moisture-response stretching nylon yarn. A water-vapour permeability index (imt) of the moisture-response deforming fabric is greater than or equal to 0.35 under a measurement of the validation FTTS-FP-161.

Find Patent Forward Citations

Lin, Wei-Hsiang. (2026). Moisture-response deforming fabric (U.S. Patent No. 12553159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12553159

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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