The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Dec. 07, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yoon Ah Shin, Santa Clara, CA (US);

Bencherki Mebarki, Santa Clara, CA (US);

Joung Joo Lee, San Jose, CA (US);

Xianmin Tang, San Jose, CA (US);

Thai Cheng Chua, Cupertino, CA (US);

Christian W. Valencia, Alhambra, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); H01J 37/32192 (2013.01); H01L 21/02057 (2013.01);
Abstract

Methods for reducing metal oxide layers on semiconductor devices to pure metal layers using microwave radiation are described. The method includes exposing a semiconductor substrate surface to microwave radiation to reduce a metal oxide layer on a metal material. The semiconductor substrate surface may have at least one feature extending a depth from the substrate surface to a bottom and having two sidewalls, where the bottom includes the metal oxide layer and the two sidewalls include a dielectric material.


Find Patent Forward Citations

Loading…