The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Aug. 08, 2023
Applicant:

Japan Display Inc., Tokyo, JP;

Inventor:

Masanobu Ikeda, Tokyo, JP;

Assignee:

JAPAN DISPLAY INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H01L 21/02 (2006.01); H10D 30/47 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
C23C 14/0617 (2013.01); C23C 14/3407 (2013.01); C23C 14/3485 (2013.01); H01J 37/3244 (2013.01); H01J 37/3429 (2013.01); H01J 2237/332 (2013.01); H01L 21/0254 (2013.01); H01L 21/02631 (2013.01); H10D 30/475 (2025.01); H10H 20/01335 (2025.01);
Abstract

A method for manufacturing a gallium nitride film includes the steps of placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber, supplying a sputtering gas into the vacuum chamber, supplying a nitrogen radical into the vacuum chamber, generating a plasma of the sputtering gas by application of a voltage to the target, generating a gallium ion by a collision of an ion of the sputtering gas with the target, and stopping the application of the voltage to the target and depositing gallium nitride on the substrate. The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.


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