The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jul. 05, 2022
Applicant:

Champion Microelectronic Corporation, Hsinchu, TW;

Inventors:

Jeffrey Hwang, Saratoga, CA (US);

Hung-Chen Lin, Zhudong Township, TW;

Chi-Wu Yao, Zhubei, TW;

Cheng-Hsiung Chang, Zhudong Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 24/48 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73257 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A stacked transistor arrangement and process of manufacture thereof are provided. Switched electrodes of first and second transistor chips are accessible on opposite sides of the first and second transistor chips. The first and second transistor chips are stacked one on top of the other. Switched electrodes of adjacent sides of the transistor chips are coupled together by a conductive layer positioned between the first and second transistor chips. Switched electrodes on sides of the first transistor chip and the second transistor chip that are opposite the adjacent sides are coupled to a lead frame by bond wires or solder bumps.


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