The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Mar. 31, 2023
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Jaimal Williamson, Dallas, TX (US);

Guangxu Li, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/3121 (2013.01); H01L 23/49822 (2013.01); H01L 23/528 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/16227 (2013.01);
Abstract

An electronic device includes a semiconductor die having a semiconductor body, a metallization structure over the semiconductor body, a protective overcoat layer over the metallization structure, a polyimide layer over the protective overcoat layer, a crack arrest structure including contiguous metal crack arrest features in the metallization structure that extend from the protective overcoat layer toward the semiconductor body, conductive terminals that extend from the metallization structure through the protective overcoat layer and the polyimide layer, and a protruded metal feature over the crack arrest structure and at least partially abutting the polyimide layer, and a package structure that at least partially encloses the semiconductor die.


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