The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

May. 17, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Daniel Rugar, Los Altos, CA (US);

Harry Jonathon Mamin, Palo Alto, CA (US);

Jiri Stehlik, New York, NY (US);

Timothy Phung, Milpitas, CA (US);

Robert M. Shelby, Boulder Creek, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/80 (2023.01); G06N 10/40 (2022.01); H10N 60/12 (2023.01); H10N 99/00 (2023.01);
U.S. Cl.
CPC ...
H10N 99/05 (2023.02); G06N 10/40 (2022.01); H10N 60/12 (2023.02); H10N 60/805 (2023.02);
Abstract

Systems and techniques that facilitate controlling TLS via on-chip filtering to prevent qubit energy loss are provided. In various embodiments, a system can comprise a quantum device including a qubit device on a substate. In various embodiments, the quantum device can include an electrode placed in proximity to the qubit device. In various embodiments, an electrical filter can be connected to the electrode. In various embodiments, the quantum device can comprise a voltage source that can be connected to the electrode via the electrical filter. In various embodiments, the voltage source can control a voltage to the electrode to shift a resonant frequency of one or more defects to reduce two level system (TLS) impact on the qubit device.


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