The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Aug. 17, 2022
Applicant:
Fujifilm Dimatix, Inc., Lebanon, NH (US);
Inventors:
Assignee:
FUJIFILM DIMATIX, INC., Lebanon, NH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 30/079 (2023.01); B41J 2/14 (2006.01); H10N 30/00 (2023.01); H10N 30/06 (2023.01); H10N 30/076 (2023.01); H10N 30/20 (2023.01); H10N 30/853 (2023.01); H10N 30/87 (2023.01);
U.S. Cl.
CPC ...
H10N 30/079 (2023.02); B41J 2/14274 (2013.01); H10N 30/06 (2023.02); H10N 30/076 (2023.02); H10N 30/2047 (2023.02); H10N 30/708 (2024.05); H10N 30/8554 (2023.02); H10N 30/877 (2023.02);
Abstract
A piezoelectric film stack is created by forming a lower electrode stack on a structured substrate. A pyrochlore lead zirconium titanate (PZT) buffer substrate layer is then formed on the lower electrode stack. A rapid thermal anneal of the PZT buffer substrate layer is then performed. Epitaxial perovskite (100) PZT film on the PZT buffer substrate layer is grown. An upper electrode stack is formed on the perovskite (100) PZT film.
Li, Youming. (2026). Process of epitaxial grown pzt film and method of making a pzt device (U.S. Patent No. 12550616). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550616
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile