The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jul. 11, 2022
Applicant:

Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;

Inventors:

Weihuan Li, Tianjin, CN;

Liwei Wang, Tianjin, CN;

Xiaofeng Liu, Xiamen, CN;

Duxiang Wang, Tianjin, CN;

Chaoyu Wu, Xiamen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/824 (2025.01); H10H 20/816 (2025.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/852 (2025.01);
Abstract

A semiconductor light-emitting component includes a semiconductor epitaxial structure that includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer includes a first current spread layer having a first and second parts which are stacked on one another. The first part has an average band gap greater than that of the second part. The second part is formed by alternately stacking first sub layers and second sub layers one on another. Each of the first sub layers has a band gap different from that of each of the second sub layers. A light-emitting device including the semiconductor light-emitting component is also disclosed.


Find Patent Forward Citations

Loading…