Flip light emitting diode chip and manufacturing method therefor

Abstract

This application is directed to a flip light emitting diode chip and a manufacturing method therefor. Said chip comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a transparent conductive layer, a transparent insulating layer, a reflective electrode, a connection electrode and DBR layer. The N-type semiconductor layer, active layer and ss P-type semiconductor layer are sequentially stacked on the substrate. The transparent conductive layer and transparent insulating layer are sequentially stacked on the P-type semiconductor layer. A plurality of through holes are provided in the transparent insulating layer, and includes a plurality of rows of first through holes. The first through holes in the same row have the same distance (d) to a groove provided on the P-type semiconductor layer and in a direction away from the groove. The sum of the cross-sectional areas of the first through holes in each row gradually increases.