The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Mar. 14, 2023
Infineon Technologies Austria Ag, Villach, AT;
Harsh Naik, El Segundo, CA (US);
Timothy Henson, Mount Shasta, CA (US);
Ashita Mirchandani, Rolling Hills Estates, CA (US);
Robert Haase, San Pedro, CA (US);
Honghai He, Redondo Beach, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
In an embodiment, a semiconductor device is provided that includes: a vertical power FET configured to switch a load current and provide a channel of a first conductivity type; and a lateral FET configured to drive the vertical power FET and provide a channel of a second conductivity type opposing the first conductivity type. The vertical power FET and the lateral FET are monolithically integrated into a semiconductor substrate of the first conductivity type and a drain of the lateral FET is electrically coupled to a gate of the vertical power FET.