The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Jul. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jongchul Park, Seoul, KR;
Hyonwook Ra, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first gate electrode and a second gate electrode which are each on a substrate and extend in a first direction, first and second source/drain patterns spaced apart from the first and second gate electrodes in a second direction which crosses the first direction, and an active contact in common connection with top surfaces of the first source/drain pattern and the second source/drain pattern. The active contact comprises a first portion on the first source/drain pattern and a second portion on the second source/drain pattern. The device includes an insulating separation pattern which extends in the second direction to separate the first gate electrode from the second gate electrode, and the active contact comprises a third portion which extends to a region below a bottom surface of the insulating separation pattern to connect the first and second portions of the active contact to each other.