The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Mar. 03, 2023
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Teruyuki Ohashi, Kawasaki Kanagawa, JP;

Hiroshi Kono, Himeji Hyogo, JP;

Shunsuke Asaba, Himeji Hyogo, JP;

Takahiro Ogata, Kawasaki Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/832 (2025.01); H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 84/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H10D 8/60 (2025.01); H10D 62/106 (2025.01); H10D 84/146 (2025.01);
Abstract

A semiconductor device according to an embodiment includes a semiconductor chip having a transistor region and a diode region, a first conductor, and a second conductor. The semiconductor chip includes a first electrode, a second electrode, a silicon carbide layer between the first electrode and the second electrode, and a gate electrode. The transistor region is provided with a third electrode spaced apart from the first electrode and close to the diode region. One end of the first conductor is in contact with the first electrode, and one end of the second conductor is in contact with the third electrode.


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