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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12550396 B1

PDFFull Text
Date of Patent:
Feb. 10, 2026

Filed:

Feb. 22, 2023

Semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yosuke Kajiwara, Yokohama Kanagawa, JP;

Aya Shindome, Yokohama Kanagawa, JP;

Masahiko Kuraguchi, Yokohama Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, LLP

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/10 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 64/64 (2025.01); H10D 64/66 (2025.01); H10P 14/20 (2026.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10D 62/824 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/117 (2025.01); H10D 62/124 (2025.01); H10D 62/8503 (2025.01); H10D 64/256 (2025.01); H10D 64/516 (2025.01); H10D 64/647 (2025.01); H10D 64/66 (2025.01); H10P 14/3416 (2026.01); H10P 14/69215 (2026.01); H10P 14/69391 (2026.01); H10P 14/3216 (2026.01); H10P 14/3248 (2026.01);
Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first nitride region, a second nitride region, and a third nitride region. The first nitride region includes AlGaN (0≤x1<1). The first nitride region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second nitride region includes AlGaN (x1<x2≤1) or InAlGaN (0<y≤1, 0≤z<1, y+z≤1). The second nitride region includes a sixth partial region. The third nitride region includes AlGaN (x1<x3<x2). The third nitride region includes a seventh partial region.

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