The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Jun. 14, 2021
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Akiko Honjo, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
An effective channel width is expanded. A semiconductor device includes: a semiconductor layer having an active region demarcated by a separation region; and a field-effect transistor in which a pair of main electrode regions sandwiching a channel region are provided in the active region and a gate electrode is provided on the channel region. The active region has a first portion extending in one direction in plan view and a second portion extending from the first portion in a direction crossing the one direction, and the channel region is provided across the first portion and the second portion. One of the pair of main electrode regions is provided in the first region in contact with the channel region, and the other is provided in the second region in contact with the channel region, the pair of main electrode regions being positioned on mutually opposite sides sandwiching the channel region.