The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

May. 30, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ingyu Jang, Suwon-si, KR;

Jinbum Kim, Suwon-si, KR;

Sujin Jung, Suwon-si, KR;

Gyeom Kim, Gyeonggi-do, KR;

Dahye Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/62 (2025.01);
Abstract

A semiconductor device includes an active pattern disposed on a substrate; a gate structure disposed on the active pattern; channels disposed on the substrate and that are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate; a first epitaxial layer disposed on a portion of the active pattern adjacent to the gate structure; and a contact plug disposed on the first epitaxial layer. The contact plug includes a lower portion; a middle portion disposed on the lower portion, where the middle portion has a width that increases from a bottom to a top thereof along the vertical direction; and an upper portion disposed on the middle portion.


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