Semiconductor device including 2d material layers

Abstract

A semiconductor device includes channel structures spaced apart in a vertical direction; lower/upper first gate insulation patterns contacting lower/upper surfaces of the channel structures; a gate electrode surrounding lower/upper surfaces and a sidewall of the channel structures; and source/drain layers at sides of the gate electrode, wherein the channel structures include first/second 2D material layers stacked in the vertical direction, the first 2D material layer includes a semiconducting TMD including a first transition metal and first chalcogen elements that are bonded at lower/upper sides of the first transition metal, the second 2D material layer includes a second transition metal and a second chalcogen element, the second chalcogen element being bonded at a lower side of the second transition metal, and the second transition metal included in the second 2D material layer is covalently or ionically bonded with an element of the upper first gate insulation pattern.