The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Mar. 04, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Shogo Mochizuki, Mechanicville, NY (US);
Su Chen Fan, Cohoes, NY (US);
Nicolas Jean Loubet, Guilderland, NY (US);
Xuan Liu, Clifton Park, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/60 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/794 (2025.01); H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/28568 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/60 (2025.01); H10D 64/62 (2025.01);
Abstract
Embodiments of present invention provide a semiconductor device. The semiconductor structure includes a plurality of nanosheet (NS) channel layers having a plurality of source/drain (S/D) regions on sidewalls thereof; and a continuous contact via being in direct contact with the plurality of S/D regions, wherein the continuous contact via has a substantially same horizontal distance to each of the plurality of NS channel layers. A method of manufacturing the same is also provided.