The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Aug. 26, 2020
Southeast University, Jiangsu, CN;
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Wangran Wu, Wuxi, CN;
Guangan Yang, Wuxi, CN;
Feng Lin, Wuxi, CN;
Guipeng Sun, Wuxi, CN;
Yaohui Wang, Wuxi, CN;
Weifeng Sun, Wuxi, CN;
Longxing Shi, Wuxi, CN;
SOUTHEAST UNIVERSITY, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
An IGZO thin-film transistor and a method for manufacturing same. The method includes: acquiring a substrate; forming an IGZO layer on the substrate by a solution process; doping V impurities on a surface of the IGZO layer by a spin doping process; forming a source electrode at one side of the IGZO layer, and forming a drain electrode at the other side; forming a gate dielectric layer on the doped IGZO layer; and forming a gate electrode on the gate dielectric layer.