The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Dec. 02, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kwanghee Lee, Hwaseong-si, KR;
Sangwook Kim, Seongnam-si, KR;
Euntae Kim, Osan-si, KR;
Jeeeun Yang, Uiwang-si, KR;
Moonil Jung, Suwon-si, KR;
Sangjun Hong, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Provided are oxide semiconductor transistors. The oxide semiconductor transistor includes a substrate, a channel layer arranged on the substrate and having a flat plate shape extending along one plane, a gate electrode facing a part of the channel layer, and a source region and a drain region separated from each other with the gate electrode therebetween, wherein the source region contacts three or more surfaces of the channel layer, and the drain region contacts three or more surfaces of the channel layer.