The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Oct. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyeok Ahn, Suwon-si, KR;

Sohyun Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H10B 12/00 (2023.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10D 30/63 (2025.01); H10D 64/513 (2025.01); H10D 84/83 (2025.01); H10B 12/00 (2023.02); H10B 61/22 (2023.02);
Abstract

A semiconductor device includes a semiconductor substrate provided with active regions, an isolation layer defining each active region on the semiconductor substrate, gate electrodes overlapping the active regions and extending in a first direction parallel to an upper surface of the semiconductor substrate, an insulating barrier structure disposed at a level higher than a level of where the gate electrodes are disposed, the insulating barrier structure having a grid pattern including grid cells, bitlines extending in a second direction perpendicular to the first direction and parallel to the upper surface of the semiconductor substrate, and disposed at a level higher than a level of where the insulating barrier structure is disposed, and first contact plugs, each first contact plug being disposed in a corresponding grid cell of the grid cells of the insulating barrier structure.


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