The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Jun. 03, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yang Xu, Seoul, KR;
Nam Kyu Cho, Yongin-si, KR;
Seok Hoon Kim, Suwon-si, KR;
Yong Seung Kim, Seongnak-si, KR;
Pan Kwi Park, Incheon, KR;
Dong Suk Shin, Suwon-si, KR;
Sang Gil Lee, Ansan-si, KR;
Si Hyung Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other, and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.