The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Dec. 07, 2021
Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;
Jian Rao, Suzhou, CN;
Jheng-Sheng You, Suzhou, CN;
PO-Wei Chen, Suzhou, CN;
Ming-Hong Chang, Suzhou, CN;
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou, CN;
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a nitride-based layer, and a plurality of gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The nitride-based layer is disposed over the second nitride-based semiconductor layer and extends along a first direction to have a strip profile. The gate electrodes are disposed over the nitride-based layer and arranged along the first direction such that at least two of the gate electrodes are separated from each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile