The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Sep. 05, 2023
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Hsih-Yang Chiu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01G 4/005 (2006.01); H01G 4/01 (2006.01); H10B 12/00 (2023.01); H10D 1/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H01G 4/005 (2013.01); H01G 4/01 (2013.01); H10B 12/033 (2023.02); H10D 1/043 (2025.01); H10D 1/714 (2025.01); H10D 1/716 (2025.01);
Abstract

A semiconductor device includes a bottom electrode structure disposed over a semiconductor substrate. The bottom electrode structure includes a first metal layer, a second metal layer, a third metal layer, a fourth metal layer, and a fifth metal layer from bottom to top. The first metal layer, the third metal layer and the fifth metal layer include a first metal material, and the second metal layer and the fourth metal layer include a second metal material different from the first metal material. The semiconductor device also includes a high-k dielectric structure disposed on opposite sidewalls of the bottom electrode structure. The opposite sidewalls of the bottom electrode structure are step-shaped. The semiconductor device further includes a top electrode structure laterally surrounding the bottom electrode structure and separated from the bottom electrode structure by the high-k dielectric structure.


Find Patent Forward Citations

Chiu, Hsih-Yang. (2026). Semiconductor device with electrode having step-shaped sidewall and method for preparing the same (U.S. Patent No. 12550343). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550343

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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