The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Sep. 09, 2021
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Tokyo, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Hitoshi Kunitake, Kanagawa, JP;
Kazuaki Ohshima, Kanagawa, JP;
Masashi Oota, Kanagawa, JP;
Kazuma Furutani, Kanagawa, JP;
Takeshi Aoki, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.