The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Oct. 05, 2022
Applicant:

Akoustis Technologies Corp., Huntersville, NC (US);

Inventor:

Jeffrey B. Shealy, Davidson, NC (US);

Assignee:

Akoustis Technologies Corp., Huntersville, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/13 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/17 (2006.01); H03H 9/64 (2006.01); H01L 21/28 (2025.01); H10N 30/076 (2023.01); H10N 30/093 (2023.01);
U.S. Cl.
CPC ...
H03H 9/13 (2013.01); H03H 9/02015 (2013.01); H03H 9/0542 (2013.01); H03H 9/0595 (2013.01); H03H 9/173 (2013.01); H03H 9/174 (2013.01); H03H 9/175 (2013.01); H01L 21/28202 (2013.01); H03H 3/02 (2013.01); H03H 2003/021 (2013.01); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01); H03H 2003/027 (2013.01); H03H 9/6426 (2013.01); H10N 30/076 (2023.02); H10N 30/093 (2023.02); Y10T 29/42 (2015.01);
Abstract

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.


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