The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jan. 18, 2025
Applicant:

China University of Mining and Technology (Beijing), Beijing, CN;

Inventors:

Shuangbiao Han, Beijing, CN;

Jie Huang, Beijing, CN;

Chengshan Wang, Beijing, CN;

Shuai Hua, Beijing, CN;

Yu Qiao, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/44 (2006.01); G01N 24/08 (2006.01); G01N 33/24 (2006.01); G01R 33/30 (2006.01); G01R 33/46 (2006.01);
U.S. Cl.
CPC ...
G01R 33/448 (2013.01); G01N 24/081 (2013.01); G01N 33/24 (2013.01); G01R 33/30 (2013.01); G01R 33/46 (2013.01);
Abstract

A method for evaluating accumulation efficiency of helium-rich natural gas includes: obtaining geological data of a rock sample of a stratum reservoir to be evaluated where the geological data includes a first and a second NMR spectral signal of the rock sample and a slope obtained by linearly fitting first volumes of a target fluid and NMR signal intensities of the rock sample imbibing the target fluid of the first volumes, calculating a second volume of the target fluid in the rock sample saturated with the target fluid in vacuum environment, determining gas driving efficiencies of the rock sample under different gas driving pressures, determining an accumulation pressure of the rock sample, and evaluating an accumulation efficiency of the stratum reservoir to be evaluated according to the accumulation pressure of the rock sample and the second volume of the target fluid.


Find Patent Forward Citations

Loading…