The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Mar. 24, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sunhye Hwang, Suwon-si, KR;
Sung Gi Kim, Daejeon, KR;
Jihyun Lee, Suwon-si, KR;
Yujin Cho, Daejeon, KR;
Seung Son, Daejeon, KR;
Gyun Sang Lee, Daejeon, KR;
Younjoung Cho, Suwon-si, KR;
Byungkeun Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
DNF Co., LTD, Daejeon, KR;
Abstract
Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1. In Formula 1, Ais a heterocyclic group including one or more nitrogen, and Ris hydrogen or an alkyl group of 1˜6 carbon atoms. Rmay be an alkyl group of 1˜6 carbon atoms. Rmay be an alkyl group of 1˜6 carbon atoms.