The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jul. 21, 2021
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Sei Negoro, Kyoto, JP;

Kenji Kobayashi, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/30608 (2013.01); H01L 21/32134 (2013.01); H01L 21/6708 (2013.01);
Abstract

According to the present invention, a substrate W is provided with a recess. The width of the recessis smaller than the depth of the recess. An etching target which is at least one of a single crystal of silicon, a polysilicon and an amorphous silicon is exposed in at least a part of the upper part of a lateral surfaceand in at least a part of the lower part of the lateral surface. The etching target is etched by supplying an alkaline first etching liquid, in which an inert gas is dissolved, to the substrate W. The etching target is etched by supplying an alkaline second etching liquid, in which a dissolution gas is dissolved, and which has a dissolved oxygen concentration higher than that of the first etching liquid, to the substrate W before or after the first etching liquid is supplied to the substrate W.


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