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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12545630 B1

PDFFull Text
Date of Patent:
Feb. 10, 2026

Filed:

May. 23, 2022

Electrostatic chuck, electrostatic chuck heater comprising same, and semiconductor holding device

Applicant:

Amosense Co.,ltd, Cheonan-si, KR;

Inventor:

Ji Hyung Lee, Cheonan-si, KR;

Assignee:

AMOSENSE CO., LTD., Cheonan-si, KR;

Attorney:

ROTHWELL, FIGG, ERNST & MANBECK, P.C.

Primary Examiner:

Scott Bauer

Int. Cl.
CPC ...
C04B 41/50 (2006.01); C04B 35/584 (2006.01); C04B 35/626 (2006.01); C04B 35/632 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); C04B 41/87 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H05B 3/26 (2006.01);
U.S. Cl.
CPC ...
C04B 41/5045 (2013.01); C04B 35/584 (2013.01); C04B 35/6261 (2013.01); C04B 35/62675 (2013.01); C04B 35/6268 (2013.01); C04B 35/632 (2013.01); C04B 41/0036 (2013.01); C04B 41/4529 (2013.01); C04B 41/5031 (2013.01); C04B 41/87 (2013.01); H01J 37/32724 (2013.01); H01L 21/6833 (2013.01); H05B 3/265 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3878 (2013.01); C04B 2235/3882 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6584 (2013.01); C04B 2235/9607 (2013.01); C04B 2235/9669 (2013.01); H01J 2237/2007 (2013.01);
Abstract

An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

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