The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Feb. 19, 2021
Applicant:

Rockley Photonics Limited, Cheshire, GB;

Inventors:

Hua Yang, Cork, IE;

Adam Scofield, Los Angeles, CA (US);

Frank Peters, Cork, IE;

Assignee:

Rockley Photonics Limited, Altrincham, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/76 (2006.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/855 (2025.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/02518 (2013.01); H01L 21/76 (2013.01); H10H 20/01 (2025.01); H10H 20/8215 (2025.01); H10H 20/855 (2025.01); H01L 2221/68327 (2013.01);
Abstract

A method of manufacturing a transfer die for use in a transfer print process. The manufactured transfer die comprises a semiconductor device suitable for bonding to a silicon-on-insulator wafer. The method comprises the steps of providing a non-conductive isolation region in a semiconductor stack, the semiconductor stack comprising a sacrificial layer above a substrate; and etching an isolation trench into the semiconductor stack from an upper surface thereof, such that the isolation trench extends only to a region of the semiconductor stack above the sacrificial layer. The isolation trench and the non-conductive isolation region together separate a bond pad from a waveguide region in the optoelectronic device.


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