The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Mar. 31, 2023
City University of Hong Kong, Kowloon, HK;
Johnny Chung Yin Ho, Shatin, HK;
You Meng, Kowloon, HK;
Wei Wang, Kowloon, HK;
Weijun Wang, Yau Tsim Mong, HK;
City University of Hong Kong, Kowloon, HK;
Abstract
A method of fabricating semiconducting tellurium (Te) nanomesh. The method includes the steps of preparing a substrate, vaporizing Te powders under a first temperature; and growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature. The first temperature is higher than the second temperature. The rationally designed nanomesh exhibits exciting properties, such as micrometer-level patterning capacity, excellent field-effect hole mobility, fast photoresponse in the optical communication region, and controllable electronic structure of the mixed-dimensional heterojunctions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile