The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Mar. 22, 2021
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Assignee:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 29/40 (2006.01); C30B 33/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02631 (2013.01); C30B 23/025 (2013.01); C30B 29/403 (2013.01); C30B 33/02 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02667 (2013.01); H01L 21/02381 (2013.01); H01L 21/02546 (2013.01);
Abstract
A method of fabricating a semiconductor device includes providing a substrate, implementing a growth procedure to form a semiconductor layer supported by the substrate, performing an anneal of the semiconductor layer, the anneal being conducted at a higher temperature than the growth procedure, and repeating the growth procedure and the anneal. The anneal is conducted at or above a decomposition temperature for the semiconductor layer.