The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Apr. 11, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wooyoung Yang, Suwon-si, KR;

Segab Kwon, Seoul, KR;

Hajun Sung, Hwaseong-si, KR;

Dongho Ahn, Hwaseong-si, KR;

Changseung Lee, Yongin-si, KR;

Minwoo Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H10B 63/84 (2023.02); H10N 70/826 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/8833 (2023.02);
Abstract

Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode and a metal oxide doped in the chalcogen compound layer. In the semiconductor device, by doping the metal oxide, an off-current value (leakage current value) of the selection device layer may be reduced, and static switching characteristics may be implemented.


Find Patent Forward Citations

Loading…