The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Aug. 03, 2022
Applicant:

Genesee Valley Innovations, Llc, Santa Clara, CA (US);

Inventors:

Thomas Wunderer, Santa Cruz, CA (US);

Max Batres, Freemont, CA (US);

Chris Chua, San Jose, CA (US);

Assignee:

Genesee Valley Innovations, LLC, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/80 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); G02B 27/01 (2006.01);
U.S. Cl.
CPC ...
H10H 20/862 (2025.01); H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); G02B 27/0172 (2013.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01);
Abstract

A light emitting diode (LED) array includes bottom reflectors patterned as an array of closed shapes on a top plane of a base layer for III-N growth. A three-dimensional III-N structure is epitaxially grown around the array of closed shapes and extending above the bottom reflectors. The three-dimensional III-N structures is a contiguous crystalline structure extending across the array. A laterally grown III-N layer is formed in contact with both the reflectors and the three-dimensional III-N structures, and III-N LED layers are grown on the laterally grown layer. One or more top reflectors are grown or deposited on the III-N LED layers and located over the bottom reflectors.


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