The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Jul. 20, 2023
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Wonjae Chang, Seoul, KR;

Sunghyun Hwang, Seoul, KR;

Chunghyun Lim, Seoul, KR;

Minwoo Lee, Seoul, KR;

Myoungsoo Kim, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/84 (2025.01); H10H 29/01 (2025.01); H10H 29/03 (2025.01);
U.S. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/84 (2025.01); H01L 2224/95144 (2013.01); H10H 29/012 (2025.01); H10H 29/03 (2025.01);
Abstract

Embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first conductivity type semiconductor layer in the semiconductor light emitting device for a display pixel, a first contact electrode electrically connected to, a metal layer disposed under the first conductivity-type semiconductor layer, a second contact electrode disposed on the second conductivity-type semiconductor layer, and a passivation disposed on the light emitting structure may contain layers. The metal layer may include a magnetic material, and a weight ratio of the magnetic material to the weight of the semiconductor light emitting device may be 0.25% to 36.75%.


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