The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Nov. 21, 2022
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Antonio Lopez-Julia, Aachen, DE;

Aimi Abass, Aachen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/819 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/841 (2025.01); H01L 25/16 (2023.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/819 (2025.01); H10H 20/0137 (2025.01); H10H 20/841 (2025.01); H01L 25/167 (2013.01); H10H 20/825 (2025.01); H10H 29/142 (2025.01);
Abstract

A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts, a lateral dielectric layer on the side surfaces of the LED, and an electrically conductive bonding layer on the lateral dielectric layer. The bonding layer is electrically coupled to the anode electrical contact and electrically insulated from side surfaces of the active and n-doped layers by the lateral dielectric layer. The LED has a cross-sectional area that increases monotonically with increasing distance from its anode contact surface toward its light-exit surface. Side-surface shape is arranged so that internal reflection within the LED or lateral dielectric layer redirects a portion of light, emitted by the active layer and propagating within the LED outside an escape cone, to propagate toward the exit surface of the n-doped layer within the escape cone.


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